Cree releases 6-inch SiC backplane

Cree has released a SiC backplane with a diameter of 6 inches (150mm) (published in English). Mainly used for LED, high frequency components and power semiconductor components. According to Cree, the company's SiC backplane is mainly 4 inches (100mm). If a 6-inch base plate is used, the production efficiency will be improved, which will help reduce the cost of components.

It is understood that the popularity of SiC power components will accelerate after mass production of 6-inch substrates. This is because the increase in production efficiency helps to reduce manufacturing costs, and the price of SiC power components is expected to decrease. Currently, some manufacturers are in the process of producing SiC diodes fabricated using 4-inch substrates. With the popularity of the 6-inch base plate, it is estimated that the number of manufacturers engaged in the SiC power component business will increase.

In addition, Cree said that the density of the microtubes (one of the crystal defects) of the 6-inch product does not exceed 10/cm2.

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